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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MDC5000T1/D SMALLBLOCKTM Low Voltage Bias Stabilizer * Maintains Stable Bias Current in Various Discrete Bipolar Junction and Field Effect Transistors * Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components * Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc * Reduces Bias Current Variation Due to Temperature and Unit-to-Unit Parametric Changes * Consumes MDC5000T1 SILICON SMALLBLOCKTM INTEGRATED CIRCUIT t 0.5 mW at VCC = 2.75 V This device provides a reference voltage and acts as a DC feedback element around an external discrete, NPN BJT or N-Channel FET. It allows the external transistor to have its emitter/source directly grounded and still operate with a stable collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF stages operating from a low voltage regulated supply, but can also be used to stabilize the bias current of any linear stage in order to eliminate emitter/source bypassing and achieve tighter bias regulation over temperature and unit variations. This device is intended to replace a circuit of three to six discrete components and is available in a SOT-143 package. The combination of low supply voltage, low quiescent current drain, and small package make it ideal for portable communications applications such as: * Cellular Telephones * Pagers * PCN/PCS Portables * PCMCIA RF Modems * Cordless Phones * Broadband Transceivers and Other Portable Wireless Products MAXIMUM RATINGS Rating Power Supply Voltage Ambient Operating Temperature Range Storage Temperature Range Junction Temperature Collector Emitter Voltage (Q2) Symbol VCC TA Tstg TJ VCEO Value 15 -40 to +85 -65 to +150 150 -15 Unit Vdc C C C V CASE 318A-05, Style 9 SOT-143 INTERNAL CIRCUIT DIAGRAM VCC (3) R1 Q1 R2 Vref (4) Q2 R4 GND (1) Iout (2) R3 THERMAL CHARACTERISTICS Characteristic Total Device Power Dissipation (FR-5 PCB of 1 x 0.75 x 0.062, TA = 25C) Derate above 25C Thermal Resistance, Junction to Ambient Symbol PD Max 225 1.8 RJA 556 Unit mW mW/C C/W DEVICE MARKING MDC5000T1 = E5 SMALLBLOCK is a trademark of Motorola, Inc. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 MDC5000T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Recommended Operating Supply Voltage Power Supply Current (VCC = 2.75 V) Vref, Iout are unterminated See Figure 8 Q2 Collector Emitter Breakdown Voltage (IC2 = 10 A, IB2 = 0) Reference Voltage (VCC = 2.75 V, Vout = 0.7 V) (Iout = 30 A) (Iout = 150 A) See Figure 9 Reference Voltage (VCC = 2.75 V, Vout = 0.7 V, -40C TA +85C) VCC Pulse Width = 10 mS, Duty Cycle = 1.0% (Iout = 10 A) (Iout = 30 A) (Iout = 100 A) See Figure 9 Symbol VCC ICC Min 1.8 -- Typ 2.75 110 Max 10 200 Unit Volts A V(BR)CEO2 Vref -15 Volts Volts 2.010 2.075 2.035 2.100 2.060 2.125 DVref 5 12 25 10 25 50 mV 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC5000T1 TYPICAL OPEN LOOP CHARACTERISTICS (Refer to Circuit of Figure 9) 10 = 1000 m A = 500 m A = 100 m A = 10 mA Iout Iout Iout Iout 6 8 7 6 5 4 3 2 1 Vref (Vdc) 7 8 9 0 0 1 2 3 4 V CC , SUPPLY VOLTAGE (Vdc) 5 Figure 1. Vref versus VCC @ Iout Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MDC5000T1 TYPICAL OPEN LOOP CHARACTERISTICS (Refer to Circuits of Figures 8, 10 & 11) 50 40 30 20 V ref (mV) 10 0 -10 -20 -30 -40 -50 -45 -35 -25 -15 -5 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (C) Iout = 10 mA VCC = 2.75 Vdc Iout = 30 mA Iout = 500 mA Iout = 100 mA 65 75 85 Figure 2. DVref versus TJ @ Iout 900 800 ICC , SUPPLY CURRENT ( mAdc) 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 VCC, SUPPLY VOLTAGE (Vdc) 8 9 10 TJ = +85C TJ = +25C TJ = -40C H FE , Q2 DC CURRENT GAIN 1000 500 300 200 100 50 30 20 10 10 VCE = Vout - Vref = -1.5 Vdc 20 30 50 100 200 300 Iout, DC OUTPUT CURRENT (mAdc) 500 1000 TJ = -40C TJ = +25C TJ = +85C Figure 3. ICC versus VCC @ TJ Figure 4. Q2 Current Gain versus Output Current 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC5000T1 TYPICAL CLOSED LOOP PERFORMANCE (Refer to Circuits of Figures 12 & 13) 1.5 1.0 0.5 VCC = 2.75 Vdc HFE3 = 113 IC3 = 15 mA V ref (%) IC3 = 10 mA 4.0 3.0 2.0 1.0 0 -1.0 -2.0 IC3 = 1 mA 65 75 85 -3.0 0 50 100 150 200 250 300 HFE, EXTERNAL TRANSISTOR DC BETA 350 VCC = 2.75 Vdc TA = 25C IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA D IC 3 (%) 0 -0.5 IC3 = 3 mA -1.0 -1.5 -45 -35 -25 -15 -5 5 15 25 35 45 55 TA, AMBIENT TEMPERATURE (C) Figure 5. DIC3 versus TA @ IC3 10 VCC = 2.75 Vdc TA = 25C Figure 6. DVref versus External Transistor DC Beta @ IC3 5.0 D I C 3 (%) 0 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA -5.0 -10 -15 0 50 250 300 100 150 200 HFE, EXTERNAL TRANSISTOR DC BETA 350 Figure 7. DIC3 versus External Transistor DC Beta @ IC3 Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 MDC5000T1 OPEN LOOP TEST CIRCUITS ICC VCC (3) + VCC Q1 + VCC Q1 VCC (3) MDC5000T1 Vref (4) Q2 Iout (2) GND (1) GND (1) MDC5000T1 Q2 Vref (4) Iref Iout (2) Iout Iout Vref V A + VBE3 = 0.7 V NOTE: VBE3 is used to simulate actual operating conditions that reduce VCE2 & HFE2, and increase IB2 & Vref. Figure 8. ICC versus VCC Test Circuit Figure 9. Vref versus VCC Test Circuit VCC (3) + VCC = 2.75 V Q1 VCC (3) Q1 MDC5000T1 Q2 Vref (4) Iref Iout (2) Vref V GND (1) IB MDC5000T1 Q2 Vref (4) Iout (2) Iout Iout A 1.5 V + GND (1) Iout Iout A + VBE3 = 0.7 V NOTE: VBE3 is used to simulate actual operating conditions that reduce VCE2 & HFE2, and increase IB2 & Vref. Figure 10. Vref versus TJ Test Circuit Figure 11. HFE versus Iout Test Circuit 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC5000T1 CLOSED LOOP TEST CIRCUITS VCC (3) + VCC = 2.75 V Q1 A IC3 MDC5000T1 Q2 Vref (4) Iout (2) A Iout VBE3 Q3 V Vref GND (1) Figure 12. RF Stage IC3 versus HFE3 Test Circuit VCC (3) + VCC = 2.75 V Q1 A IC3 MDC5000T1 Q2 Vref (4) Iout (2) 1K VBE3 51 0.1 mF 100 pF 0.018 mF Q3 MRF941 HFE = 113 100 pF 0.018 mF 51 GND (1) NOTE: External R-Cs used to Maintain Broadband Stability of MRF9411 Figure 13. RF Stage IC3 versus TA Test Circuit Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 MDC5000T1 REGULATED VCC = 2.75 Vdc VCC (3) IC3 = 3 mAdc R1 Q1 R2 Vref = 2.035 Vdc 470 pF Vref (4) Iout (2) Iout 470 pF RF IN 9 pF 1K 180 Q3 MRF9411 Typ 30 nH 18 nH RF OUT R5 240 W MDC5000T1 R3 Q2 R4 GND (1) 8.0 nH 4-STEP DESIGN PROCEDURE Step 1: Step 2: Step 3: Step 4: Choose VCC (1.8 V Min to 10 V Max) Choose bias current, IC3, and calculate needed Iout from typ HFE3 From Figure 1, read Vref for VCC & Iout calculated. Calculate Nominal R5 = (VCC - Vref) / (IC3 + Iout). Tweak as desired. Figure 14. Class A Biasing of a Typical 900 MHz BJT Amplifier REGULATED VCC = 2.75 Vdc VCC (3) ID = 15 mAdc R5 43 W Q1 R2 Vref = 2.100 Vdc 1000 pF Vref (4) Iout (2) Iout RF IN 6.1 pF + 1K 12.5 nH 1000 pF R6 22 K D S EGS 5 Vdc Q3 MRF9811 Typ 6.8 nH 2.7 pF RF OUT RFC R1 MDC5000T1 R3 Q2 R4 GND (1) 6-STEP DESIGN PROCEDURE Step 1: Choose VCC (1.8 V Min to 10 V Max) Step 2: Choose bias current, ID, and determine needed gate-source voltage, VGS. Step 3: Choose Iout keeping in mind that too large an Iout can impair MDC5000T1 DVref/DTJ performance (Figure 2) but too large an R6 can cause IDGO & IGSO to bias on the FET. Step 4: Calculate R6 = (VGS + EGS) / Iout Step 5: From Figure 1, read Vref for VCC & Iout chosen Step 6: Calculate Nominal R5 = (VCC - Vref) / (ID + Iout). Tweak as desired. Figure 15. Class A Biasing of a Typical 890 MHz Depletion Mode GaAs FET Amplifier 8 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC5000T1 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES MIN MAX MIN MAX 2.80 3.04 0.110 0.120 1.20 1.39 0.047 0.055 0.84 1.14 0.033 0.045 0.39 0.50 0.015 0.020 0.79 0.93 0.031 0.037 1.78 2.03 0.070 0.080 0.013 0.10 0.0005 0.004 0.08 0.15 0.003 0.006 0.46 0.60 0.018 0.024 0.445 0.60 0.0175 0.024 0.72 0.83 0.028 0.033 2.11 2.48 0.083 0.098 A L 3 G 4 S 1 2 B F D DIM A B C D F G H J K L R S 0.112 2.85 0.079 2 0.033 0.85 0.075 1.9 0.041 1.05 0.108 2.75 0.071 1.8 0.033 0.85 0.047 1.2 0.031 0.8 0.033 0.85 inches mm H R C K J STYLE 9: PIN 1. 2. 3. 4. GND IOUT VCC VREF SOT-143 FOOTPRINT CASE 318A-05 ISSUE M Motorola Small-Signal Transistors, FETs and Diodes Device Data 9 MDC5000T1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 10 Motorola Small-Signal Transistors, FETs and Diodes MDC5000T1/D Device Data *MDC5000T1/D* |
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